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1991

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Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/32235

Effect of substrate temperature on deposition rate of rf plasma-deposited hydrogenated amorphous silicon thin films

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Recurs relacionat

http://dx.doi.org/10.1063/1.348470

Resum

We present a study about the influence of substrate temperature on deposition rate of hydrogenated amorphous silicon thin films prepared by rf glow discharge decomposition of pure silane gas in a capacitively coupled plasma reactor. Two different behaviors are observed depending on deposition pressure conditions. At high pressure (30 Pa) the influence of substrate temperature on deposition rate is mainly through a modification of gas density, in such a way that the substrate temperature of deposition rate is similar to pressure dependence at constant temperature. On the contrary, at low pressure (3 Pa), a gas density effect cannot account for the observed increase of deposition rate as substrate temperature rises above 450 K with an activation energy of 1.1 kcal/mole. In accordance with laser‐induced fluorescence measurements reported in the literature, this rise has been ascribed to an increase of secondary electron emission from the growing film surface as a result of molecular hydrogen desorption.

Matèries

Pel·lícules fines, Silici, Semiconductors amorfs

Matèries (anglès)

Thin films, Silicon, Amorphous semiconductors

Citació

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Articles publicats en revistes (Física Aplicada)

Citació

ANDÚJAR BELLA, José Luis, et al. Effect of substrate temperature on deposition rate of rf plasma-deposited hydrogenated amorphous silicon thin films. Journal of Applied Physics. 1991. Vol. 69, num. 6, pags. 3757-3759. ISSN 0021-8979. [consulted: 15 of August of 2026]. Available at: https://hdl.handle.net/2445/32235

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