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2009

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47148

Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

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http://dx.doi.org/10.1016/j.mseb.2008.10.049

Abstract

In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρc ∼ 10 mΩ cm2) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

Subject

Deposició química en fase vapor, Alumini, Cèl·lules solars, Làsers, Corrosió i anticorrosius, Semiconductors

Subject (English)

Chemical vapor deposition, Aluminum, Solar cells, Lasers, Corrosion and anti-corrosives, Semiconductors

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MUÑOZ RAMOS, David, et al. Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD. Materials Science and Engineering B-Solid State Materials for Advanced Technology. 2009. Vol. 159-160, num. 23-26. ISSN 0921-5107. [consulted: 8 of August of 2026]. Available at: https://hdl.handle.net/2445/47148

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