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Highly textured Sr, Nb, co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf-sputtering

dc.contributor.authorOstos, C.
dc.contributor.authorRaymond, Oscar
dc.contributor.authorSuarez-Almodovar, N.
dc.contributor.authorBueno-Baqués, D.
dc.contributor.authorMestres i Vila, Ma. Lourdes
dc.contributor.authorSiqueiros, J. M.
dc.date.accessioned2013-02-01T08:56:27Z
dc.date.available2013-02-01T08:56:27Z
dc.date.issued2011
dc.date.updated2013-02-01T08:56:27Z
dc.description.abstractIn this study, (011)-highly oriented Sr, Nb co-doped BiFeO3 (BFO) thin films were successfully grown on SrRuO3/Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of 5.3 nm and average grain sizes of 65-70 nm for samples with different thicknesses. Remanent polarization values (2Pr) of 54 lC cm 2 at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe3þ/Fe2þ trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/ SrRuO3/Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.
dc.format.extent8 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec607816
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/2445/33659
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.isformatofReproducció del document publicat a: https://doi.org/10.1063/1.3610428
dc.relation.ispartofJournal of Applied Physics, 2011, vol. 110, p. 024114-1-024114-7
dc.relation.urihttps://doi.org/10.1063/1.3610428
dc.rights(c) American Institute of Physics , 2011
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Química Inorgànica i Orgànica)
dc.subject.classificationPel·lícules fines
dc.subject.classificationFerroelectricitat
dc.subject.classificationMetall-òxid-semiconductors complementaris
dc.subject.classificationEspintrònica
dc.subject.classificationNiobi
dc.subject.otherThin films
dc.subject.otherFerroelectricity
dc.subject.otherComplementary metal oxide semiconductors
dc.subject.otherSpintronics
dc.subject.otherNiobium
dc.titleHighly textured Sr, Nb, co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf-sputtering
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion

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