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Strain-induced quenching of optical transitions in capped self-assembled quantum dot structures
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Strain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the
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critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain produced inside the islands by the cap layer. Certainly, this strain increases as the InSb deposition diminishes, changing the band lineup of the system from type-I to type-II and therefore drastically reducing the oscillator strengths of the island-related
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transitions.
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PRIETO, J. A., et al. Strain-induced quenching of optical transitions in capped self-assembled quantum dot structures. Physical Review Letters. 1998. Vol. 80, num. 5, pags. 1094-1097. ISSN 0031-9007. [consulted: 15 of August of 2026]. Available at: https://hdl.handle.net/2445/13168