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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/124593
Characterisation of a Silicon Photomultiplier of 64 channels
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This work presents the study of a 64 channel silicon photomultiplier (3.2 x 3.2 mm2 each channel) built by Hammamatsu. From the experimental data, the values of the gain at four different voltages (68V, 68.5V, 69V, 69.5V) are measured for each channel and, the breakdown voltage and the gain per voltage, for each channel, have been determined. Also measurements at 70V have been preformed but rejected because of the amount of noise.
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Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Curs: 2018, Tutor: Ricardo Graciani Diaz
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VENTURA BARROSO, Ana. Characterisation of a Silicon Photomultiplier of 64 channels. [consulted: 17 of August of 2026]. Available at: https://hdl.handle.net/2445/124593