Characterisation of a Silicon Photomultiplier of 64 channels

dc.contributor.advisor	Graciani Díaz, Ricardo
dc.contributor.author	Ventura Barroso, Ana
dc.date.accessioned	2018-09-14T15:42:56Z
dc.date.available	2018-09-14T15:42:56Z
dc.date.issued	2018-01
dc.description	Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Curs: 2018, Tutor: Ricardo Graciani Diaz	ca
dc.description.abstract	This work presents the study of a 64 channel silicon photomultiplier (3.2 x 3.2 mm2 each channel) built by Hammamatsu. From the experimental data, the values of the gain at four different voltages (68V, 68.5V, 69V, 69.5V) are measured for each channel and, the breakdown voltage and the gain per voltage, for each channel, have been determined. Also measurements at 70V have been preformed but rejected because of the amount of noise.	ca
dc.format.extent	5 p.
dc.format.mimetype	application/pdf
dc.identifier.uri	https://hdl.handle.net/2445/124593
dc.language.iso	eng	ca
dc.rights	cc-by-nc-nd (c) Ventura, 2018
dc.rights.accessRights	info:eu-repo/semantics/openAccess	ca
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/es/	*
dc.source	Treballs Finals de Grau (TFG) - Física
dc.subject.classification	Detectors	cat
dc.subject.classification	Silici	cat
dc.subject.classification	Treballs de fi de grau	cat
dc.subject.other	Detectors	eng
dc.subject.other	Silicon	eng
dc.subject.other	Bachelor's theses	eng
dc.title	Characterisation of a Silicon Photomultiplier of 64 channels	eng
dc.type	info:eu-repo/semantics/bachelorThesis	ca

Fitxers

Mostrant 1 - 1 de 1