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2000

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47381

Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD

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http://dx.doi.org/10.1016/S0921-5107(99)00252-4

Abstract

Polysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented.

Subject

Silici, Pel·lícules fines, Microelectrònica, Deposició química en fase vapor, Transistors, Semiconductors, Cèl·lules solars

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Silicon, Thin films, Microelectronics, Chemical vapor deposition, Transistors, Semiconductors, Solar cells

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PUIGDOLLERS I GONZÁLEZ, Joaquim, et al. Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD. Materials Science and Engineering B-Solid State Materials for Advanced Technology. 2000. Vol. 69-70, num. 526-529. ISSN 0921-5107. [consulted: 6 of June of 2026]. Available at: https://hdl.handle.net/2445/47381

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