Microcrystalline silicon thin film transistors obtained by Hot-Wire CVD

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dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorOrpella, Albert
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.authorDosev, D.
dc.contributor.authorPallarés Curto, Jordi
dc.contributor.authorPeiró, D.
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorBertomeu i Balagueró, Joan
dc.contributor.authorAndreu i Batallé, Jordi
dc.contributor.authorMarsal Garví, Lluís F. (Lluís Francesc)
dc.date.accessioned2013-10-29T15:51:43Z
dc.date.available2013-10-29T15:51:43Z
dc.date.issued2000
dc.date.updated2013-10-29T15:51:43Z
dc.description.abstractPolysilicon thin film transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in flat panel displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with the fabrication of TFT deposited by hot-wire chemical vapor deposition (HWCVD). Some results concerned with the structural characterization of the material and electrical performance of the device are presented.
dc.format.extent8 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec147812
dc.identifier.issn0921-5107
dc.identifier.urihttps://hdl.handle.net/2445/47381
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.isformatofVersió postprint del document publicat a: http://dx.doi.org/10.1016/S0921-5107(99)00252-4
dc.relation.ispartofMaterials Science and Engineering B-Solid State Materials for Advanced Technology, 2000, vol. 69-70, p. 526-529
dc.relation.urihttp://dx.doi.org/10.1016/S0921-5107(99)00252-4
dc.rights(c) Elsevier B.V., 2000
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Física Aplicada)
dc.subject.classificationSilici
dc.subject.classificationPel·lícules fines
dc.subject.classificationMicroelectrònica
dc.subject.classificationDeposició química en fase vapor
dc.subject.classificationTransistors
dc.subject.classificationSemiconductors
dc.subject.classificationCèl·lules solars
dc.subject.otherSilicon
dc.subject.otherThin films
dc.subject.otherMicroelectronics
dc.subject.otherChemical vapor deposition
dc.subject.otherTransistors
dc.subject.otherSemiconductors
dc.subject.otherSolar cells
dc.titleMicrocrystalline silicon thin film transistors obtained by Hot-Wire CVD
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion

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