Alloy inhomogeneities in InAlAs strained layers grown by MBE

dc.contributor.authorPeiró Martínez, Francisca
dc.contributor.authorCornet i Calveras, Albert
dc.contributor.authorMorante i Lleonart, Joan Ramon
dc.contributor.authorClark, S. A.
dc.contributor.authorWilliams, R. H.
dc.date.accessioned2012-10-08T12:08:11Z
dc.date.available2012-10-08T12:08:11Z
dc.date.issued1992
dc.date.updated2012-10-08T12:08:11Z
dc.description.abstractTransmission electron microscopy studies have been performed to characterize InxAl1−xAs layers grown by molecular beam epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics.
dc.format.extent3 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec061619
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/2445/32219
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.351083
dc.relation.ispartofJournal of Applied Physics, 1992, vol. 71, num. 5, p. 2470-2472
dc.relation.urihttp://dx.doi.org/10.1063/1.351083
dc.rights(c) American Institute of Physics , 1992
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject.classificationMicroscòpia electrònica
dc.subject.classificationPel·lícules fines
dc.subject.classificationFeixos moleculars
dc.subject.otherElectron microscopy
dc.subject.otherThin films
dc.subject.otherMolecular beams
dc.titleAlloy inhomogeneities in InAlAs strained layers grown by MBEeng
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion

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