Files

105869.pdf (745.76 KB)

Document type

Article

Version

Published version

Publication date

1995-12-01

All rights reserved

Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/24743

Nanometer-scale oxidation of Si(100) surfaces by tapping mode atomic force microscopy

Journal Title

Authors

Director/Tutor

Journal ISSN

Volume Title

Related resource

http://dx.doi.org/10.1063/1.360505

Abstract

The nanometer¿scale oxidation of Si(100) surfaces in air is performed with an atomic force microscope working in tapping mode. Applying a positive voltage to the sample with respect to the tip, two kinds of modifications are induced on the sample: grown silicon oxide mounds less than 5 nm high and mounds higher than 10 nm (which are assumed to be gold depositions). The threshold voltage necessary to produce the modification is studied as a function of the average tip¿to¿sample distance.

Subject

Microscòpia de força atòmica, Silici, Nanoelectrònica, Detectors, Camps elèctrics

Subject (English)

Atomic force microscopy, Silicon, Nanoelectronics, Detectors, Electric fields

Citation

Collections

Articles publicats en revistes (Ciència dels Materials i Química Física)

Citation

PÉREZ MURANO, Francesc, et al. Nanometer-scale oxidation of Si(100) surfaces by tapping mode atomic force microscopy. Journal of Applied Physics. 1995. Vol. 78, num. 11, pags. 6797-6802. ISSN 0021-8979. [consulted: 24 of July of 2026]. Available at: https://hdl.handle.net/2445/24743

Export metadata

JSON - METS

Share record