Nanometer-scale oxidation of Si(100) surfaces by tapping mode atomic force microscopy
| dc.contributor.author | Pérez Murano, Francesc | cat |
| dc.contributor.author | Abadal, G. | cat |
| dc.contributor.author | Barniol i Beumala, Núria | cat |
| dc.contributor.author | Aymerich Humet, Xavier | cat |
| dc.contributor.author | Servat, J. | cat |
| dc.contributor.author | Gorostiza Langa, Pablo Ignacio | cat |
| dc.contributor.author | Sanz Carrasco, Fausto | cat |
| dc.date.accessioned | 2012-05-02T11:05:11Z | |
| dc.date.available | 2012-05-02T11:05:11Z | |
| dc.date.issued | 1995-12-01 | |
| dc.date.updated | 2012-04-25T10:54:02Z | |
| dc.description.abstract | The nanometer¿scale oxidation of Si(100) surfaces in air is performed with an atomic force microscope working in tapping mode. Applying a positive voltage to the sample with respect to the tip, two kinds of modifications are induced on the sample: grown silicon oxide mounds less than 5 nm high and mounds higher than 10 nm (which are assumed to be gold depositions). The threshold voltage necessary to produce the modification is studied as a function of the average tip¿to¿sample distance. | |
| dc.format.extent | 5 p. | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.idgrec | 105869 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.uri | https://hdl.handle.net/2445/24743 | |
| dc.language.iso | eng | eng |
| dc.publisher | American Institute of Physics | |
| dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.360505 | |
| dc.relation.ispartof | Journal of Applied Physics, 1995, vol. 78, núm. 11, p. 6797-6802 | |
| dc.relation.uri | http://dx.doi.org/10.1063/1.360505 | |
| dc.rights | (c) American Institute of Physics, 1995 | |
| dc.rights.accessRights | info:eu-repo/semantics/openAccess | |
| dc.source | Articles publicats en revistes (Ciència dels Materials i Química Física) | |
| dc.subject.classification | Microscòpia de força atòmica | cat |
| dc.subject.classification | Silici | cat |
| dc.subject.classification | Nanoelectrònica | cat |
| dc.subject.classification | Detectors | cat |
| dc.subject.classification | Camps elèctrics | cat |
| dc.subject.other | Atomic force microscopy | eng |
| dc.subject.other | Silicon | eng |
| dc.subject.other | Nanoelectronics | eng |
| dc.subject.other | Detectors | eng |
| dc.subject.other | Electric fields | eng |
| dc.title | Nanometer-scale oxidation of Si(100) surfaces by tapping mode atomic force microscopy | eng |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:eu-repo/semantics/publishedVersion |
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