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2010-01-20

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/15726

Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters

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http://dx.doi.org/10.1364/OE.18.002230

Abstract

This study reports the estimation of the inverted Er fraction in a system of Er doped silicon oxide sensitized by Si nanoclusters, made by magnetron sputtering. Electroluminescence was obtained from the sensitized erbium, with a power efficiency of 10¿2 %. By estimating the density of Er ions that are in the first excited state, we find that up to 20% of the total Er concentration is inverted in the best device, which is one order of magnitude higher than that achieved by optical pumping of similar materials.

Subject

Terres rares, Semiconductors, Propietats òptiques, Amplificadors (Electrònica)

Subject (English)

Semiconductors, Optical properties, Amplifiers (Electronics)

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
Publicacions de projectes de recerca finançats per la UE

Citation

JAMBOIS, Olivier, et al. Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters. Optics Express. 2010. Vol. 18, num. núm 3, pags. 2230-2235. ISSN 1094-4087. [consulted: 10 of August of 2026]. Available at: https://hdl.handle.net/2445/15726

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