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Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy

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dc.contributor.authorRoura Grabulosa, Perecat
dc.contributor.authorLópez de Miguel, Manuelcat
dc.contributor.authorCornet i Calveras, Albertcat
dc.contributor.authorMorante i Lleonart, Joan Ramoncat
dc.date.accessioned2012-05-03T06:33:05Z
dc.date.available2012-05-03T06:33:05Z
dc.date.issued1997-05-15
dc.description.abstractA series of InxAl12xAs samples (0.51,x,0.55) coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x50.532, at 14 K we have obtained Eg05154966 meV. © 1997 American Institute of Physics.eng
dc.format.extent5 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec115846
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/2445/24784
dc.language.isoengeng
dc.publisherAmerican Institute of Physics
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.365253
dc.relation.ispartofJournal of Applied Physics, 1997, vol. 81, num. 10, p. 6916-6920
dc.relation.urihttp://dx.doi.org/10.1063/1.365253
dc.rights(c) American Institute of Physics, 1997
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject.classificationMicroscòpia electrònicacat
dc.subject.classificationPel·lícules finescat
dc.subject.otherElectron microscopyeng
dc.subject.otherThin filmseng
dc.titleDetermination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopyeng
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion

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