Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices

dc.contributor.authorAragonès, Albert C.
dc.contributor.authorAravena Ponce, Daniel Alejandro
dc.contributor.authorValverde-Muñoz, Francisco J.
dc.contributor.authorReal, José Antonio
dc.contributor.authorSanz Carrasco, Fausto
dc.contributor.authorDíez Pérez, Ismael
dc.contributor.authorRuiz Sabín, Eliseo
dc.date.accessioned2020-04-01T16:25:13Z
dc.date.available2020-04-01T16:25:13Z
dc.date.issued2017-04-26
dc.date.updated2020-04-01T16:25:13Z
dc.description.abstractThe appropriate choice of the transition metal complex and metal surface electronic structure opens the possibility to control the spin of the charge carriers through the resulting hybrid molecule/metal spinterface in a single molecule electrical contact at room temperature. The single molecule conductance of a Au/molecule/Ni junction can be switched by flipping the magnetization direction of the ferromagnetic electrode. The requirements of the molecule include not just the presence of unpaired electrons: the electronic configuration of the metal center has to provide occupied or empty orbitals that strongly interact with the junction metal electrodes and that are close in energy to their Fermi levels for one of the electronic spins only. The key ingredient for the metal surface is to provide an efficient spin texture induced by the spin orbit coupling in the topological surface states that results in an efficient spin-dependent interaction with the orbitals of the molecule. The strong magnetoresistance effect found in this kind of single-molecule wire opens a new approach for the design of room-temperature nanoscale devices based on spin-polarized currents controlled at molecular level.
dc.format.extent11 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec673811
dc.identifier.issn0002-7863
dc.identifier.urihttps://hdl.handle.net/2445/154758
dc.language.isoeng
dc.publisherAmerican Chemical Society
dc.relation.isformatofVersió postprint del document publicat a: https://doi.org/10.1021/jacs.6b11166
dc.relation.ispartofJournal of the American Chemical Society, 2017, vol. 139, num. 16, p. 5768-5778
dc.relation.urihttps://doi.org/10.1021/jacs.6b11166
dc.rights(c) American Chemical Society , 2017
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Química Inorgànica i Orgànica)
dc.subject.classificationMagnetoresistència
dc.subject.classificationTeoria del funcional de densitat
dc.subject.classificationEspintrònica
dc.subject.otherMagnetoresistance
dc.subject.otherDensity functionals
dc.subject.otherSpintronics
dc.titleMetal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion

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