Electron capture and emission by the Ti acceptor level in GaP

dc.contributor.authorRoura Grabulosa, Perecat
dc.contributor.authorMorante i Lleonart, Joan Ramoncat
dc.contributor.authorGuillot, G.cat
dc.contributor.authorBremond, G.cat
dc.contributor.authorUlrici, W.cat
dc.date.accessioned2012-05-03T09:56:38Z
dc.date.available2012-05-03T09:56:38Z
dc.date.issued1995-08-15
dc.description.abstractPreviously reported results on deep level optical spectroscopy, optical absorption, deep level transient spectroscopy, photoluminescence excitation, and time resolved photoluminescence are reviewed and discussed in order to know which are the mechanisms involved in electron capture and emission of the Ti acceptor level in GaP. First, the analysis indicates that the 3T1(F) crystal¿field excited state is not in resonance with the conduction band states. Second, it is shown that both the 3T2 and 3T1(F) excited states do not play any significant role in the process of electron emission and capture.eng
dc.format.extent6 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec523185
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/2445/24822
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.360097
dc.relation.ispartofJournal of Applied Physics, 1995, vol. 78, núm. 4, p. 2441-2446
dc.relation.urihttp://dx.doi.org/10.1063/1.360097
dc.rights(c) American Institute of Physics, 1995
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject.classificationEstructura electrònicacat
dc.subject.classificationPropietats òptiquescat
dc.subject.otherElectronic structureeng
dc.subject.otherOptical propertieseng
dc.titleElectron capture and emission by the Ti acceptor level in GaPeng
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion

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