The valence band alignment at ultrathin SiO2/Si interfaces
| dc.contributor.author | Alay, Josep Lluís | |
| dc.contributor.author | Hirose, M. | |
| dc.date.accessioned | 2012-10-08T13:06:35Z | |
| dc.date.available | 2012-10-08T13:06:35Z | |
| dc.date.issued | 1997 | |
| dc.date.updated | 2012-10-08T13:06:35Z | |
| dc.description.abstract | High resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO2/Si interfaces. In the oxide thickness range 1.6-4.4 nm the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO2/Si(100) and the wet SiO2/Si(100) interfaces, respectively. The valence band alignment of dry SiO2/Si(111) (4.36 eV) is slightly smaller than the case of the dry SiO2/Si(100) interface. | |
| dc.format.extent | 3 p. | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.idgrec | 567525 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.uri | https://hdl.handle.net/2445/32224 | |
| dc.language.iso | eng | |
| dc.publisher | American Institute of Physics | |
| dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.363895 | |
| dc.relation.ispartof | Journal of Applied Physics, 1997, vol. 81, num. 3, p. 1606-1608 | |
| dc.relation.uri | http://dx.doi.org/10.1063/1.363895 | |
| dc.rights | (c) American Institute of Physics , 1997 | |
| dc.rights.accessRights | info:eu-repo/semantics/openAccess | |
| dc.source | Articles publicats en revistes (Història i Arqueologia) | |
| dc.subject.classification | Semiconductors | |
| dc.subject.classification | Interfícies (Ciències físiques) | |
| dc.subject.other | Semiconductors | |
| dc.subject.other | Interfaces (Physical sciences) | |
| dc.title | The valence band alignment at ultrathin SiO2/Si interfaces | eng |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:eu-repo/semantics/publishedVersion |
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