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TFG-Vergara-Cruz-Jorge.pdf (562.64 KB)

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Bachelor thesis

Publication date

2014-09

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cc-by-nc-nd (c) Vergara Cruz, 2014
Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/59730

Preparation and characterization of tin (II) oxide powder as p-type semiconductor for its deposition by ink jet printing

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Abstract

The synthesis through a simple chemical route of SnO powder was successfully done. By using a home-made Hall-effect setup, its p-type behaviour is confirmed, showing high hole mobility around 102 cm2·V-1·s-1 and low resistivity ρ=6.52 Ω·m. Moreover the powder exhibits an interesting behaviour with the temperature changing its conformation to SnO2 that is n-type semiconductor.

Description

Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Any: 2014, Tutora: Anna Vilà Arbones

Subject

Semiconductors, Cristalls, Treballs de fi de grau

Subject (English)

Semiconductors, Crystals, Bachelor's theses

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Treballs Finals de Grau (TFG) - Física

Citation

VERGARA CRUZ, Jorge Carlos. Preparation and characterization of tin (II) oxide powder as p-type semiconductor for its deposition by ink jet printing. [consulted: 14 of August of 2026]. Available at: https://hdl.handle.net/2445/59730

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