Preparation and characterization of tin (II) oxide powder as p-type semiconductor for its deposition by ink jet printing

dc.contributor.advisor	Vilà i Arbonès, Anna Maria
dc.contributor.author	Vergara Cruz, Jorge Carlos
dc.date.accessioned	2014-11-17T12:46:52Z
dc.date.available	2014-11-17T12:46:52Z
dc.date.issued	2014-09
dc.description	Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Any: 2014, Tutora: Anna Vilà Arbones	ca
dc.description.abstract	The synthesis through a simple chemical route of SnO powder was successfully done. By using a home-made Hall-effect setup, its p-type behaviour is confirmed, showing high hole mobility around 102 cm2·V-1·s-1 and low resistivity ρ=6.52 Ω·m. Moreover the powder exhibits an interesting behaviour with the temperature changing its conformation to SnO2 that is n-type semiconductor.	ca
dc.format.extent	4 p.
dc.format.mimetype	application/pdf
dc.identifier.uri	https://hdl.handle.net/2445/59730
dc.language.iso	eng	ca
dc.rights	cc-by-nc-nd (c) Vergara Cruz, 2014
dc.rights.accessRights	info:eu-repo/semantics/openAccess	ca
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.source	Treballs Finals de Grau (TFG) - Física
dc.subject.classification	Semiconductors	cat
dc.subject.classification	Cristalls	cat
dc.subject.classification	Treballs de fi de grau	cat
dc.subject.other	Semiconductors	eng
dc.subject.other	Crystals	eng
dc.subject.other	Bachelor's theses	eng
dc.title	Preparation and characterization of tin (II) oxide powder as p-type semiconductor for its deposition by ink jet printing	eng
dc.type	info:eu-repo/semantics/bachelorThesis	ca

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