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Photoluminiscence in silicon powder grown by plasma-enhanced chemical-vapour deposition: Evidence of a multistep-multiphoton excitation process
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The dynamics of the infrared photoluminescence (PL) in silicon powder grown by plasma-enhanced chemical-vapor deposition (PECVD) of silane is reported. A nonlinear dependence of PL intensity on laser power of the form I a: P" with n as high as 7 has been found, indicating a multistep-multiphoton excitation process. To confi.rm this hypothesis a very detailed theoretical and experimental analysis has been performed. As a result, the lifetimes of several levels in the excitation chain have been determined, as well as the optical cross section (u). For the slowest level u= 3 X 10- 18 cm2 and the lifetime is as long as 400 ms. As the energy of the emitted photon is smaller than that of the excitation photon, a model involving a considerable nonradiative energy relaxation, together with a tunnel effect is proposed.
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ROURA GRABULOSA, Pere, et al. Photoluminiscence in silicon powder grown by plasma-enhanced chemical-vapour deposition: Evidence of a multistep-multiphoton excitation process. Physical Review B. 1994. Vol. 50, num. 24, pags. 124-133. ISSN 0163-1829. [consulted: 2 of August of 2026]. Available at: https://hdl.handle.net/2445/10651