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Photoluminiscence in silicon powder grown by plasma-enhanced chemical-vapour deposition: Evidence of a multistep-multiphoton excitation process
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The dynamics of the infrared photoluminescence (PL) in silicon powder grown by plasma-enhanced chemical-vapor deposition (PECVD) of silane is reported. A nonlinear dependence of PL intensity on laser power of the form I a: P" with n as high as 7 has been found, indicating a multistep-multiphoton excitation process. To confi.rm this hypothesis a very detailed theoretical and experimental analysis has been performed. As a result, the lifetimes of several levels in the excitation chain have been determined, as well as the optical cross section (u). For the slowest level u= 3 X 10- 18 cm2 and the lifetime is as long as 400 ms. As the energy of the emitted photon is smaller than that of the excitation photon, a model involving a considerable nonradiative energy relaxation, together with a tunnel effect is proposed.
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ROURA GRABULOSA, Pere, COSTA I BALANZAT, Josep, SARDIN, Georges, MORANTE I LLEONART, Joan ramon, BERTRÁN SERRA, Enric. Photoluminiscence in silicon powder grown by plasma-enhanced chemical-vapour deposition: Evidence of a multistep-multiphoton excitation process. _Physical Review B_. 1994. Vol. 50, núm. 24, pàgs. 124-133. [consulta: 25 de febrer de 2026]. ISSN: 0163-1829. [Disponible a: https://hdl.handle.net/2445/10651]