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1995

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cc-by (c) Polo Trasancos, Ma. del Carmen et al., 1995
Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/99362

Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition

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Abstract

Polycrystalline silicon (poly-Si) films were obtained at moderate temperatures (280-500ºC) from a mixture of silane and hydrogen in a hot wire CVD reactor. SEM and TEM results revealed a columnar growth of poly-Si grains with a preferential orientation of the crystals perpendicular to the substrate along the [110] direction. Plain view examinations along the [110] axis revealed a needled shape of the crystals 0.3-1 µm) with the largest axis randomly distributed on the plane. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising.

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Silici, Deposició química en fase vapor, Pel·lícules fines, Creixement cristal·lí

Subject (English)

Silicon, Chemical vapor deposition, Thin films, Crystal growth

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POLO TRASANCOS, Ma. del Carmen, et al. Crystal growth characterization of polycrystalline silicon films obtained by hot-wire chemical vapour deposition. Institute of Physics Conference Series. 1995. Vol. 146, num. 503-506. ISSN 0951-3248. [consulted: 12 of June of 2026]. Available at: https://hdl.handle.net/2445/99362

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