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2015

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cc-by (c) Illera Robles, Sergio et al., 2015
Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/122630

Electronic transport in QD based structures: from basic parameters to opto-electronic device simulations

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https://doi.org/10.1088/1742-6596/609/1/012002

Abstract

We present a theoretical model that explains the optoelectronic response of nanodevices based on large quantum dot (QD) arrays. The model is grounded on rate equations in the self-consistent field regime and it accurately describes the most important part of the system: the tunnel junctions. We demonstrate that the ratio between the optical terms and the transport rates determines the final device response. Furthermore, we showed that to obtain a net photocurrent the QD has to be asymmetrically coupled to the leads.

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Optoelectrònica, Nanoelectrònica

Subject (English)

Optoelectronics, Nanoelectronics

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
Articles publicats en revistes (Institut de Nanociència i Nanotecnologia (IN2UB))

Citation

ILLERA ROBLES, Sergio, et al. Electronic transport in QD based structures: from basic parameters to opto-electronic device simulations. Journal of Physics: Conference Series. 2015. Vol. 609, num. 012002. ISSN 1742-6588. [consulted: 8 of August of 2026]. Available at: https://hdl.handle.net/2445/122630

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