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4Nanophotonics-TEM_III-V_NW_optoelectronic-Sonia-Conesa.pdf (1.29 MB)

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Master thesis

Publication date

2008-09

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cc-by-nc-nd (c) Conesa Boj, 2008
Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/9822

HRTEM assessment of Wurtzite and Zinc-Blende phases in GaAs nanowires for optoelectronic devices

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Abstract

Semiconductor nanowires have recently attracted a lot of interest as potential building blocks for future electronic and optoelectronic nanodevices. In this work structural and optical properties of semiconductor nanowires are studied by means of high resolution transmission electron microscopy (HRTEM) and hotoluminescence (PL) analysis respectively. Several samples of GaAs nanowires grown under different As4 pressures are studied, and the presence of different optoelectronic properties are discussed in relation to the crystalline structures and defects found.

Description

Màster en Nanociència i Nanotecnologia. Curs 2007-2008. Directors: Francesca Peiró i Martínez and Jordi Arbiol i Cobos

Subject

Nanotecnologia, Semiconductors, Microscòpia electrònica de transmissió, Fotònica, Propietats òptiques, Treballs de fi de màster

Subject (English)

Nanotechnology, Semiconductors, Transmission electron microscopy, Photonics, Optical properties, Master's theses

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Màster Oficial - Nanociència i Nanotecnologia

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CONESA BOJ, Sònia. HRTEM assessment of Wurtzite and Zinc-Blende phases in GaAs nanowires for optoelectronic devices. [consulted: 9 of August of 2026]. Available at: https://hdl.handle.net/2445/9822

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