Impedance field and noise of submicrometer n+ nn+ diodes: analytical approach

dc.contributor.authorBulashenko, Olegcat
dc.contributor.authorGaubert, P.cat
dc.contributor.authorVarani, L.cat
dc.contributor.authorVaissiere, J. C.cat
dc.contributor.authorNougier, J. P.cat
dc.date.accessioned2012-02-16T08:49:41Z
dc.date.available2012-02-16T08:49:41Z
dc.date.issued2000
dc.description.abstractA theoretical model for the noise properties of n+nn+ diodes in the drift-diffusion framework is presented. In contrast with previous approaches, our model incorporates both the drift and diffusive parts of the current under inhomogeneous and hot-carrier conditions. Closed analytical expressions describing the transport and noise characteristics of submicrometer n+nn+ diodes, in which the diode base (n part) and the contacts (n+ parts) are coupled in a self-consistent way, are obtainedeng
dc.format.extent8 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec517048
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/2445/22099
dc.language.isoengeng
dc.publisherAmerican Institute of Physics
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.1309120
dc.relation.ispartofJournal of Applied Physics, 2000, vol. 88, núm. 8, p. 4709-4716
dc.relation.urihttp://dx.doi.org/10.1063/1.1309120
dc.rights(c) American Institute of Physics, 2000
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Física de la Matèria Condensada)
dc.subject.classificationDíodescat
dc.subject.classificationSorollcat
dc.subject.classificationCamps elèctricscat
dc.subject.classificationSemiconductorscat
dc.subject.classificationMètode de Montecarlocat
dc.subject.classificationElectrònica de l'estat sòlidcat
dc.subject.classificationMicroelectrònicacat
dc.subject.otherDiodeseng
dc.subject.otherNoiseeng
dc.subject.otherElectric fieldseng
dc.subject.otherSemiconductorseng
dc.subject.otherMonte Carlo methodeng
dc.subject.otherSolid state electronicseng
dc.subject.otherMicroelectronicseng
dc.titleImpedance field and noise of submicrometer n+ nn+ diodes: analytical approacheng
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion

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