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2000

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/22099

Impedance field and noise of submicrometer n+ nn+ diodes: analytical approach

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http://dx.doi.org/10.1063/1.1309120

Abstract

A theoretical model for the noise properties of n+nn+ diodes in the drift-diffusion framework is presented. In contrast with previous approaches, our model incorporates both the drift and diffusive parts of the current under inhomogeneous and hot-carrier conditions. Closed analytical expressions describing the transport and noise characteristics of submicrometer n+nn+ diodes, in which the diode base (n part) and the contacts (n+ parts) are coupled in a self-consistent way, are obtained

Subject

Díodes, Soroll, Camps elèctrics, Semiconductors, Mètode de Montecarlo, Electrònica de l'estat sòlid, Microelectrònica

Subject (English)

Diodes, Noise, Electric fields, Semiconductors, Monte Carlo method, Solid state electronics, Microelectronics

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Articles publicats en revistes (Física de la Matèria Condensada)

Citation

BULASHENKO, Oleg, et al. Impedance field and noise of submicrometer n+ nn+ diodes: analytical approach. Journal of Applied Physics. 2000. Vol. 88, num. 8, pags. 4709-4716. ISSN 0021-8979. [consulted: 14 of June of 2026]. Available at: https://hdl.handle.net/2445/22099

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