Document type
Master thesisPublication date
Publication license
Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/215215
Characterization of Single Electron Transistors for Quantum Dot based Spin Qubits
Journal Title
Authors
Director/Tutor
Journal ISSN
Volume Title
Related resource
Abstract
High interest is placed on semiconductor devices to achieve scalable qubit technologies essential for the development of quantum computers. Nanowires and single-electron transistors (SETs) are fundamental in this pursuit due to their potential for electron confinement with long coherence times. This work contributes to the advancements of quantum technologies by developing SET characterization setups. Advanced techniques such as lock-in AC measurements and cryogenic temperature analysis have been employed to ensure precise evaluation of these devices. The demanding fabrication process and detailed characterization provide valuable insights into the electrical performance and stability of SETs, thereby supporting their potential applications in scalable quantum computing.
Description
Màster Oficial de Ciència i Tecnologia Quàntiques / Quantum Science and Technology, Facultat de Física, Universitat de Barcelona. Curs: 2023-2024. Tutors: Francesc Pérez, Gorka Aizpurua, Marius Costache
Subject (English)
Citation
Citation
JAUREGI ABERASTURI, Urtzi. Characterization of Single Electron Transistors for Quantum Dot based Spin Qubits. [consulted: 17 of June of 2026]. Available at: https://hdl.handle.net/2445/215215