Characterization of Single Electron Transistors for Quantum Dot based Spin Qubits

Abstract

High interest is placed on semiconductor devices to achieve scalable qubit technologies essential for the development of quantum computers. Nanowires and single-electron transistors (SETs) are fundamental in this pursuit due to their potential for electron confinement with long coherence times. This work contributes to the advancements of quantum technologies by developing SET characterization setups. Advanced techniques such as lock-in AC measurements and cryogenic temperature analysis have been employed to ensure precise evaluation of these devices. The demanding fabrication process and detailed characterization provide valuable insights into the electrical performance and stability of SETs, thereby supporting their potential applications in scalable quantum computing.