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Electrical properties of individual tin oxide nanowires contacted to platinum electrodes
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A simple and useful experimental alternative to field-effect transistors for measuring electrical properties
free electron concentration nd, electrical mobility , and conductivity in individual nanowires has been
developed. A combined model involving thermionic emission and tunneling through interface states is proposed
to describe the electrical conduction through the platinum-nanowire contacts, fabricated by focused ion
beam techniques. Current-voltage I-V plots of single nanowires measured in both two- and four-probe
configurations revealed high contact resistances and rectifying characteristics. The observed electrical behavior
was modeled using an equivalent circuit constituted by a resistance placed between two back-to-back Schottky
barriers, arising from the metal-semiconductor-metal M-S-M junctions. Temperature-dependent I-V measurements
revealed effective Schottky barrier heights up to BE= 0.4 eV.
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HERNÁNDEZ RAMÍREZ, Francisco, et al. Electrical properties of individual tin oxide nanowires contacted to platinum electrodes. Physical Review B. 2007. Vol. 76, num. 8, pags. 085429-1-085429-5. ISSN 0163-1829. [consulted: 3 of August of 2026]. Available at: https://hdl.handle.net/2445/10631