Properties of amorphous silicon thin films grown in square wave modulated silane rf discharges.

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dc.contributor.authorAndújar Bella, José Luis
dc.contributor.authorBertrán Serra, Enric
dc.contributor.authorCanillas i Biosca, Adolf
dc.contributor.authorCampmany i Guillot, Josep, 1966-
dc.contributor.authorSerra-Miralles, J.
dc.contributor.authorRoch i Cunill, Carles
dc.contributor.authorLloret, A.
dc.date.accessioned2012-10-09T09:10:41Z
dc.date.available2012-10-09T09:10:41Z
dc.date.issued1992
dc.date.updated2012-10-09T09:10:41Z
dc.description.abstractHydrogenated amorphous silicon (a‐Si:H) thin films have been obtained from pure SiH4 rf discharges by using the square wave modulation (SQWM) method. Film properties have been studied by means of spectroellipsometry, thermal desorption spectrometry, photothermal deflection spectroscopy and electrical conductivity measurements, as a function of the modulation frequency of the rf power amplitude (0.2-4000 Hz). The films deposited at frequencies about 1 kHz show the best structural and optoelectronic characteristics. Based upon the experimental results, a qualitative model is presented, which points up the importance of plasma negative ions in the deposition of a‐Si:H from SQWM rf discharges through their influence on powder particle formation.
dc.format.extent3 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec060160
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/2445/32236
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.351229
dc.relation.ispartofJournal of Applied Physics, 1992, vol. 71, num. 3, p. 1546-1548
dc.relation.urihttp://dx.doi.org/10.1063/1.351229
dc.rights(c) American Institute of Physics , 1992
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Física Aplicada)
dc.subject.classificationSemiconductors amorfs
dc.subject.classificationPel·lícules fines
dc.subject.classificationSilici
dc.subject.otherAmorphous semiconductors
dc.subject.otherThin films
dc.subject.otherSilicon
dc.titleProperties of amorphous silicon thin films grown in square wave modulated silane rf discharges.eng
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion

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