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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/9849
Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP
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Abstract
The time dependence of the
2
T
2
→
2
E photoluminescence transition of
Ti
3
+
Ga
in GaP has been measured on semi-insulating, p-type conducting, and n-type conducting samples. A decay time
τ
0
=2.0 μs was obtained at T=10 K. The temperature dependence of the decay time in the conducting samples is found to be affected by the capture of free carriers by
Ti
3
+
Ga
in the excited state whereas the results on p-type conducting samples suggest hole localization at the
Ti
3
+
Ga
.
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ROURA GRABULOSA, Pere, et al. Time-resolved measurements on 2T2 -> 2E photoluminescence of Ti3+ in GaP. Physical Review B. 1992. Vol. 45, num. 20, pags. 11698-11701. ISSN 0163-1829. [consulted: 8 of October of 2026]. Available at: https://hdl.handle.net/2445/9849