Shot-noise suppression in Schottky barrier diodes

dc.contributor.authorGomila Lluch, Gabrielcat
dc.contributor.authorReggiani, L. (Lino), 1941-cat
dc.contributor.authorRubí Capaceti, José Miguelcat
dc.date.accessioned2012-05-03T10:07:36Z
dc.date.available2012-05-03T10:07:36Z
dc.date.issued2000-09-01
dc.description.abstractWe give a theoretical interpretation of the noise properties of Schottky barrier diodes based on the role played by the long range Coulomb interaction. We show that at low bias Schottky diodes display shot noise because the presence of the depletion layer makes the effects of the Coulomb interaction negligible on the current fluctuations. When the device passes from barrier to flat band conditions, the Coulomb interaction becomes active, thus introducing correlation between different current fluctuations. Therefore, the crossover between shot and thermal noise represents the suppression due to long range Coulomb interaction of the otherwise full shot noise. Similar ideas can be used to interpret the noise properties of other semiconductor devices.eng
dc.format.extent3 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec526801
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/2445/24825
dc.language.isoengeng
dc.publisherAmerican Institute of Physics
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.1288219
dc.relation.ispartofJournal of Applied Physics, 2000, vol. 88, p. 3079-3081
dc.relation.urihttp://dx.doi.org/10.1063/1.1288219
dc.rights(c) American Institute of Physics, 2000
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject.classificationMicroelectrònicacat
dc.subject.classificationMatèria condensadacat
dc.subject.otherMicroelectronicseng
dc.subject.otherCondensed mattereng
dc.titleShot-noise suppression in Schottky barrier diodeseng
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion

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