Readout electronics for low dark count pixel detectors based on geiger mode avalanche photodiodes fabricated in conventional CMOS technologies for future linear colliders

dc.contributor.authorVilella Figueras, Eva
dc.contributor.authorArbat Casas, Anna
dc.contributor.authorComerma Montells, Albert
dc.contributor.authorTrenado, J. (Juan)
dc.contributor.authorAlonso Casanovas, Oscar
dc.contributor.authorGascón Fora, David
dc.contributor.authorVilà i Arbonès, Anna Maria
dc.contributor.authorGarrido Beltrán, Lluís
dc.contributor.authorDiéguez Barrientos, Àngel
dc.date.accessioned2012-07-18T08:29:16Z
dc.date.available2012-07-18T08:29:16Z
dc.date.issued2010
dc.date.updated2012-07-18T08:29:16Z
dc.description.abstractThe high sensitivity and excellent timing accuracy of Geiger mode avalanche photodiodes makes them ideal sensors as pixel detectors for particle tracking in high energy physics experiments to be performed in future linear colliders. Nevertheless, it is well known that these sensors suffer from dark counts and afterpulsing noise, which induce false hits (indistinguishable from event detection) as well as an increase of the necessary area of the readout system. In this work, we present a comparison between APDs fabricated in a high voltage 0.35 µm and a high integration 0.13 µm commercially available CMOS technologies that has been performed to determine which of them best fits the particle collider requirements. In addition, a readout circuit that allows low noise operation is introduced. Experimental characterization of the proposed pixel is also presented in this work.
dc.format.extent5 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec584051
dc.identifier.issn0168-9002
dc.identifier.urihttps://hdl.handle.net/2445/28822
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.isformatofVersió postprint del document publicat a: http://dx.doi.org/10.1016/j.nima.2010.12.088
dc.relation.ispartofNuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, 2010, vol. 650, p. 120-124
dc.relation.urihttp://dx.doi.org/10.1016/j.nima.2010.12.088
dc.rights(c) Elsevier B.V., 2010
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject.classificationDetectors
dc.subject.classificationMetall-òxid-semiconductors complementaris
dc.subject.classificationFísica nuclear
dc.subject.classificationElectrònica
dc.subject.classificationCol·lisions (Física nuclear)
dc.subject.otherDetectors
dc.subject.otherComplementary metal oxide semiconductors
dc.subject.otherNuclear physics
dc.subject.otherElectronics
dc.subject.otherCollisions (Nuclear physics)
dc.titleReadout electronics for low dark count pixel detectors based on geiger mode avalanche photodiodes fabricated in conventional CMOS technologies for future linear colliderseng
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion

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