Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layers
| dc.contributor.author | Roura Grabulosa, Pere | cat |
| dc.contributor.author | Bosch Estrada, José | cat |
| dc.contributor.author | Morante i Lleonart, Joan Ramon | cat |
| dc.date.accessioned | 2009-10-28T09:30:21Z | |
| dc.date.available | 2009-10-28T09:30:21Z | |
| dc.date.issued | 1992 | cat |
| dc.description.abstract | Optical-absorption measurements have been carried out on tensile and compressive In x Ga 1 − x As/InP strained layers. It is shown that the energetic dispersion of the heavy-hole relative to the light-hole subband σ HH / σ LH is the key to knowing the origin of the microscopic inhomogeneities. So, σ HH / σ LH <1 indicates the existence of composition inhomogeneities whereas σ HH / σ LH =2.8 reveals an inhomogeneous strain field. | |
| dc.format.extent | 4 p. | cat |
| dc.format.mimetype | application/pdf | eng |
| dc.identifier.idgrec | 71200 | cat |
| dc.identifier.issn | 0163-1829 | cat |
| dc.identifier.uri | https://hdl.handle.net/2445/9848 | |
| dc.language.iso | eng | eng |
| dc.publisher | The American Physical Society | eng |
| dc.relation.isformatof | Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.46.10453 | cat |
| dc.relation.ispartof | Physical Review B, 1992, vol. 46, núm. 16, p. 10453-10456. | eng |
| dc.relation.uri | http://dx.doi.org/10.1103/PhysRevB.46.10453 | |
| dc.rights | (c) The American Physical Society, 1992 | eng |
| dc.rights.accessRights | info:eu-repo/semantics/openAccess | |
| dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | |
| dc.subject.classification | Electrònica de l'estat sòlid | cat |
| dc.subject.classification | Propietats òptiques | cat |
| dc.subject.classification | Luminescència | cat |
| dc.subject.classification | Semiconductors | cat |
| dc.subject.classification | Microscòpia electrònica de transmissió | cat |
| dc.subject.other | Solid state electronics | eng |
| dc.subject.other | Optical properties | eng |
| dc.subject.other | Photoluminescence | |
| dc.subject.other | Semiconductors | eng |
| dc.subject.other | Transmission electron microscopy | eng |
| dc.title | Composition modulation and inhomogeneous strain field in InxGa1-xAs/InP strained layers | eng |
| dc.type | info:eu-repo/semantics/article | eng |
| dc.type | info:eu-repo/semantics/publishedVersion |
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