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Article

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Accepted version

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2000

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47286

Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition

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http://dx.doi.org/10.1016/S0927-0248(00)00030-1

Abstract

Undoped hydrogenated microcrystalline silicon was obtained by hot-wire chemical vapour deposition at different silane-to-hydrogen ratios and low temperature (<300 °C). As well as technological aspects of the deposition process, we report structural, optical and electrical characterizations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy indicates that changing the hydrogen dilution can vary the crystalline fraction. From electrical measurements an unwanted n-type character is deduced for this undoped material. This effect could be due to a contaminant, probably oxygen, which is also observed in capacitance-voltage measurements on Schottky structures. The negative effect of contaminants on the device was dramatic and a compensated p-i-n structure was also deposited to enhance the cell performance.

Subject

Silici, Nanocristalls, Deposició química en fase vapor, Cèl·lules solars

Subject (English)

Silicon, Nanocrystals, Chemical vapor deposition, Solar cells

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Articles publicats en revistes (Física Aplicada)

Citation

VOZ SÁNCHEZ, Cristóbal, et al. Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition. Solar Energy Materials and Solar Cells. 2000. Vol. 63, num. 3, pags. 237-246. ISSN 0927-0248. [consulted: 14 of August of 2026]. Available at: https://hdl.handle.net/2445/47286

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