Fitxers

149171.pdf (110.81 KB)

Tipus de document

Article

Versió

Versió acceptada

Data de publicació

2000

Tots els drets reservats

Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/47286

Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition

Títol de la revista

Autors

Director/Tutor

ISSN de la revista

Títol del volum

Recurs relacionat

http://dx.doi.org/10.1016/S0927-0248(00)00030-1

Resum

Undoped hydrogenated microcrystalline silicon was obtained by hot-wire chemical vapour deposition at different silane-to-hydrogen ratios and low temperature (<300 °C). As well as technological aspects of the deposition process, we report structural, optical and electrical characterizations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy indicates that changing the hydrogen dilution can vary the crystalline fraction. From electrical measurements an unwanted n-type character is deduced for this undoped material. This effect could be due to a contaminant, probably oxygen, which is also observed in capacitance-voltage measurements on Schottky structures. The negative effect of contaminants on the device was dramatic and a compensated p-i-n structure was also deposited to enhance the cell performance.

Matèries

Silici, Nanocristalls, Deposició química en fase vapor, Cèl·lules solars

Matèries (anglès)

Silicon, Nanocrystals, Chemical vapor deposition, Solar cells

Citació

Col·leccions

Articles publicats en revistes (Física Aplicada)

Citació

VOZ SÁNCHEZ, Cristóbal, et al. Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition. Solar Energy Materials and Solar Cells. 2000. Vol. 63, num. 3, pags. 237-246. ISSN 0927-0248. [consulted: 16 of May of 2026]. Available at: https://hdl.handle.net/2445/47286

Exportar metadades

JSON - METS

Compartir registre