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Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition
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Undoped hydrogenated microcrystalline silicon was obtained by hot-wire chemical vapour deposition at different silane-to-hydrogen ratios and low temperature (<300 °C). As well as technological aspects of the deposition process, we report structural, optical and electrical characterizations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy indicates that changing the hydrogen dilution can vary the crystalline fraction. From electrical measurements an unwanted n-type character is deduced for this undoped material. This effect could be due to a contaminant, probably oxygen, which is also observed in capacitance-voltage measurements on Schottky structures. The negative effect of contaminants on the device was dramatic and a compensated p-i-n structure was also deposited to enhance the cell performance.
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VOZ SÁNCHEZ, Cristóbal, PEIRÓ, D., FONRODONA TURON, Marta, SOLER VILAMITJANA, David, BERTOMEU I BALAGUERÓ, Joan, ANDREU I BATALLÉ, Jordi. Microdoping compensation of microcrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition. _Solar Energy Materials and Solar Cells_. 2000. Vol. 63, núm. 3, pàgs. 237-246. [consulta: 25 de febrer de 2026]. ISSN: 0927-0248. [Disponible a: https://hdl.handle.net/2445/47286]