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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/98399
Kelvin probe measurements of microcrystalline silicon on a nanometer scale using SFM
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Work function measurements on cross-sectioned microcrystalline pin silicon solar cells deposited by Hot-Wire CVD are presented. The experiment is realized by combining a modified Kelvin probe experiment and a scanning force microscope. The measured surface potential revealed that the built-in electric drift field is weak in the middle of the compensated intrinsic layer. A graded donor distribution and a constant boron compensation have to be assumed within the intrinsic layer in order to obtain coincidence of the measurements and simulations. The microcrystalline p-silicon layer and the n-type transparent conducting oxide form a reverse polarized diode in series with the pin diode.
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BREYMESSER, A., et al. Kelvin probe measurements of microcrystalline silicon on a nanometer scale using SFM. Solar Energy Materials and Solar Cells. 2001. Vol. 66, num. 1-4, pags. 171-177. ISSN 0927-0248. [consulted: 11 of October of 2026]. Available at: https://hdl.handle.net/2445/98399