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Kelvin probe measurements of microcrystalline silicon on a nanometer scale using SFM

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dc.contributor.authorBreymesser, A.
dc.contributor.authorSchlosser, V.
dc.contributor.authorPeiró, D.
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorBertomeu i Balagueró, Joan
dc.contributor.authorAndreu i Batallé, Jordi
dc.contributor.authorSummhammer, J.
dc.date.accessioned2016-05-06T14:58:42Z
dc.date.available2016-05-06T14:58:42Z
dc.date.issued2001
dc.date.updated2016-05-06T14:58:48Z
dc.description.abstractWork function measurements on cross-sectioned microcrystalline pin silicon solar cells deposited by Hot-Wire CVD are presented. The experiment is realized by combining a modified Kelvin probe experiment and a scanning force microscope. The measured surface potential revealed that the built-in electric drift field is weak in the middle of the compensated intrinsic layer. A graded donor distribution and a constant boron compensation have to be assumed within the intrinsic layer in order to obtain coincidence of the measurements and simulations. The microcrystalline p-silicon layer and the n-type transparent conducting oxide form a reverse polarized diode in series with the pin diode.
dc.format.extent7 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec147810
dc.identifier.issn0927-0248
dc.identifier.urihttps://hdl.handle.net/2445/98399
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.isformatofVersió postprint del document publicat a: http://dx.doi.org/10.1016/S0927-0248(00)00170-7
dc.relation.ispartofSolar Energy Materials and Solar Cells, 2001, vol. 66, num. 1-4, p. 171-177
dc.relation.urihttp://dx.doi.org/10.1016/S0927-0248(00)00170-7
dc.rights(c) Elsevier B.V., 2001
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Física Aplicada)
dc.subject.classificationSilici
dc.subject.classificationDeposició química en fase vapor
dc.subject.classificationCèl·lules solars
dc.subject.otherSilicon
dc.subject.otherChemical vapor deposition
dc.subject.otherSolar cells
dc.titleKelvin probe measurements of microcrystalline silicon on a nanometer scale using SFM
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion

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