On the Hall effect in polycrystalline semiconductors

dc.contributor.authorGarcía-Cuenca Varona, María Victoria
dc.contributor.authorMorenza Gil, José Luis
dc.contributor.authorCodina i Vidal, Josep Ma. (Josep Maria), 1927-
dc.date.accessioned2012-10-09T08:52:04Z
dc.date.available2012-10-09T08:52:04Z
dc.date.issued1985
dc.date.updated2012-10-09T08:52:04Z
dc.description.abstractSome problems involved in the interpretation of Hall‐effect measurements in polycrystalline semiconductors have not been resolved, especially when the contribution of the boundaries is appreciable. Using the Herring theory of transport properties in inhomogeneous semiconductors, we present an alternative interpretation to that previously proposed. This model permits the calculation of the Hall coefficient under general conditions.
dc.format.extent3 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec005675
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/2445/32232
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.336313
dc.relation.ispartofJournal of Applied Physics, 1985, vol. 58, num. 2, p. 1080-1082
dc.relation.urihttp://dx.doi.org/10.1063/1.336313
dc.rights(c) American Institute of Physics , 1985
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Física Aplicada)
dc.subject.classificationSemiconductors
dc.subject.classificationEfecte Hall
dc.subject.otherSemiconductors
dc.subject.otherHall effect
dc.titleOn the Hall effect in polycrystalline semiconductors
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion

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