Electrically active point defects in n-type 4H¿SiC
| dc.contributor.author | Doyle, J. P. | cat |
| dc.contributor.author | Linnarsson, M. K. | cat |
| dc.contributor.author | Pellegrino, Paolo | cat |
| dc.contributor.author | Keskitalo, N. | cat |
| dc.contributor.author | Svensson, Bengt G. | cat |
| dc.contributor.author | Schoner, A. | cat |
| dc.contributor.author | Nordell, N. | cat |
| dc.contributor.author | Lindstrom, J. L. | cat |
| dc.date.accessioned | 2012-05-03T09:34:13Z | |
| dc.date.available | 2012-05-03T09:34:13Z | |
| dc.date.issued | 1998-08-01 | |
| dc.date.updated | 2012-04-20T11:21:13Z | |
| dc.description.abstract | An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers .. | |
| dc.format.extent | 4 p. | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.idgrec | 521830 | |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.uri | https://hdl.handle.net/2445/24815 | |
| dc.language.iso | eng | eng |
| dc.publisher | American Institute of Physics | |
| dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.368247 | |
| dc.relation.ispartof | Journal of Applied Physics, 1998, vol. 84, núm. 3, p. 1354-1357 | |
| dc.relation.uri | http://dx.doi.org/10.1063/1.368247 | |
| dc.rights | (c) American Institute of Physics, 1998 | |
| dc.rights.accessRights | info:eu-repo/semantics/openAccess | |
| dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | |
| dc.subject.classification | Estructura electrònica | eng |
| dc.subject.classification | Cristal·lografia | cat |
| dc.subject.other | Electronic structure | eng |
| dc.subject.other | Crystallography | eng |
| dc.title | Electrically active point defects in n-type 4H¿SiC | eng |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:eu-repo/semantics/publishedVersion |
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