Electrically active point defects in n-type 4H¿SiC

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dc.contributor.authorDoyle, J. P.cat
dc.contributor.authorLinnarsson, M. K.cat
dc.contributor.authorPellegrino, Paolocat
dc.contributor.authorKeskitalo, N.cat
dc.contributor.authorSvensson, Bengt G.cat
dc.contributor.authorSchoner, A.cat
dc.contributor.authorNordell, N.cat
dc.contributor.authorLindstrom, J. L.cat
dc.date.accessioned2012-05-03T09:34:13Z
dc.date.available2012-05-03T09:34:13Z
dc.date.issued1998-08-01
dc.date.updated2012-04-20T11:21:13Z
dc.description.abstractAn electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers ..
dc.format.extent4 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec521830
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/2445/24815
dc.language.isoengeng
dc.publisherAmerican Institute of Physics
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.368247
dc.relation.ispartofJournal of Applied Physics, 1998, vol. 84, núm. 3, p. 1354-1357
dc.relation.urihttp://dx.doi.org/10.1063/1.368247
dc.rights(c) American Institute of Physics, 1998
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject.classificationEstructura electrònicaeng
dc.subject.classificationCristal·lografiacat
dc.subject.otherElectronic structureeng
dc.subject.otherCrystallographyeng
dc.titleElectrically active point defects in n-type 4H¿SiCeng
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion

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