Electroresistance in non-tunnelling ferroelectric junctions

dc.contributor.advisorFina Martínez, Ignasi
dc.contributor.authorPrieto Viertel, Guillermo
dc.date.accessioned2018-10-09T14:40:20Z
dc.date.available2018-10-09T14:40:20Z
dc.date.issued2018-06
dc.descriptionTreballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Curs: 2018, Tutor: Ignasi Finaca
dc.description.abstractFerroelectric materials are of potential interest for their integration in memristive devices. Polarization switching in ferroelectric thin film junctions might lead to a change of the electronic band diagram of the device, which can result in important changes of resistance. This effect is known as electroresistance. Electroresistance in 12.2, 24.3 and 36.5 nm BTO thin films junctions is investigated. It is observed that electroresistance decreases with thickness. In addition, ferroelectric characterization allows to conclude that switchable ferroelectric polarization also decreases with thickness. Thus, we conclude that electroresistance is intimately linked to the ferroelectric switching process.ca
dc.format.extent5 p.
dc.format.mimetypeapplication/pdf
dc.identifier.urihttps://hdl.handle.net/2445/125195
dc.language.isoengca
dc.rightscc-by-nc-nd (c) Prieto, 2018
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessca
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.sourceTreballs Finals de Grau (TFG) - Física
dc.subject.classificationFerroelectricitatcat
dc.subject.classificationTeoria de la commutaciócat
dc.subject.classificationTreballs de fi de graucat
dc.subject.otherFerroelectricityeng
dc.subject.otherSwitching theoryeng
dc.subject.otherBachelor's theseseng
dc.titleElectroresistance in non-tunnelling ferroelectric junctionseng
dc.typeinfo:eu-repo/semantics/bachelorThesisca

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