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Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach
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We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentration
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GOMILA LLUCH, Gabriel, et al. Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach. Journal of Applied Physics. 1998. Vol. 83, num. 5, pags. 2610-2618. ISSN 0021-8979. [consulted: 18 of June of 2026]. Available at: https://hdl.handle.net/2445/22078