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On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers

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dc.contributor.authorBertomeu i Balagueró, Joan
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorAsensi López, José Miguel
dc.contributor.authorAndreu i Batallé, Jordi
dc.date.accessioned2013-11-05T12:53:27Z
dc.date.available2013-11-05T12:53:27Z
dc.date.issued1993
dc.date.updated2013-11-05T12:53:27Z
dc.description.abstractThis paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states.
dc.format.extent6 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec088431
dc.identifier.issn0022-3093
dc.identifier.urihttps://hdl.handle.net/2445/47504
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.isformatofVersió postprint del document publicat a: http://dx.doi.org/10.1016/0022-3093(93)91133-N
dc.relation.ispartofJournal of non-Crystalline Solids, 1993, vol. 164-166, num. 2, p. 861-864
dc.relation.urihttp://dx.doi.org/10.1016/0022-3093(93)91133-N
dc.rights(c) Elsevier B.V., 1993
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Física Aplicada)
dc.subject.classificationSemiconductors amorfs
dc.subject.classificationOptoelectrònica
dc.subject.classificationEspectroscòpia
dc.subject.classificationSilici
dc.subject.classificationSemimetalls
dc.subject.otherAmorphous semiconductors
dc.subject.otherOptoelectronics
dc.subject.otherSpectrum analysis
dc.subject.otherSilicon
dc.subject.otherSemimetals
dc.titleOn the determination of the interface density of states in a-Si:H/a-SiC:H multilayers
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion

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