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1993

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47504

On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers

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http://dx.doi.org/10.1016/0022-3093(93)91133-N

Abstract

This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states.

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Semiconductors amorfs, Optoelectrònica, Espectroscòpia, Silici, Semimetalls

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Amorphous semiconductors, Optoelectronics, Spectrum analysis, Silicon, Semimetals

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BERTOMEU I BALAGUERÓ, Joan, et al. On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers. Journal of non-Crystalline Solids. 1993. Vol. 164-166, num. 2, pags. 861-864. ISSN 0022-3093. [consulted: 10 of June of 2026]. Available at: https://hdl.handle.net/2445/47504

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