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Article

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Published version

Publication date

2001

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/33761

Large Magnetoresistance in Fe/MgO/FeCo(001) Epitaxial Tunnel-Junctions on GaAs(001).

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http://dx.doi.org/10.1063/1.1404125

Abstract

We present tunneling experiments on Fe~001!/MgO~20 Å!/FeCo~001! single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on ~001!-oriented Fe/amorphous-Al2O3 /FeCo tunnel junctions. This difference demonstrates that the spin polarization of tunneling electrons is not directly related to the density of states of the free metal surface Fe~001! in this case but depends on the actual electronic structure of the entire electrode/barrier system.

Subject

Magnetoresistència, Dispositius de memòria d'ordinador, Microelectrònica, Efecte túnel, Ferro

Subject (English)

Magnetoresistance, Computer storage devices, Microelectronics, Tunneling (Physics), Iron

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

Citation

BOWEN, M., et al. Large Magnetoresistance in Fe/MgO/FeCo(001) Epitaxial Tunnel-Junctions on GaAs(001). Applied Physics Letters. 2001. Vol. 79, num. 11, pags. 1655-1657. ISSN 0003-6951. [consulted: 10 of June of 2026]. Available at: https://hdl.handle.net/2445/33761

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