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Large Magnetoresistance in Fe/MgO/FeCo(001) Epitaxial Tunnel-Junctions on GaAs(001).

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dc.contributor.authorBowen, M.
dc.contributor.authorCros, V.
dc.contributor.authorPetroff, F.
dc.contributor.authorFert, Albert, 1938-
dc.contributor.authorMartínez Boubeta, José Carlos
dc.contributor.authorCosta Krämer, José Luis
dc.contributor.authorAnguita, José Virgilio
dc.contributor.authorCebollada, Alfonso
dc.contributor.authorBriones Fernández-Pola, Fernando
dc.contributor.authorTeresa, J. M. de
dc.contributor.authorMorellon, L.
dc.contributor.authorIbarra, M. R.
dc.contributor.authorGüell Vilà, Frank
dc.contributor.authorPeiró Martínez, Francisca
dc.contributor.authorCornet i Calveras, Albert
dc.date.accessioned2013-02-08T08:44:21Z
dc.date.available2013-02-08T08:44:21Z
dc.date.issued2001
dc.date.updated2013-02-08T08:44:21Z
dc.description.abstractWe present tunneling experiments on Fe~001!/MgO~20 Å!/FeCo~001! single-crystal epitaxial junctions of high quality grown by sputtering and laser ablation. Tunnel magnetoresistance measurements give 60% at 30 K, to be compared with 13% obtained recently on ~001!-oriented Fe/amorphous-Al2O3 /FeCo tunnel junctions. This difference demonstrates that the spin polarization of tunneling electrons is not directly related to the density of states of the free metal surface Fe~001! in this case but depends on the actual electronic structure of the entire electrode/barrier system.
dc.format.extent3 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec543127
dc.identifier.issn0003-6951
dc.identifier.urihttps://hdl.handle.net/2445/33761
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.relation.isformatofReproducció del document publicat a: http://dx.doi.org/10.1063/1.1404125
dc.relation.ispartofApplied Physics Letters, 2001, vol. 79, num. 11, p. 1655-1657
dc.relation.urihttp://dx.doi.org/10.1063/1.1404125
dc.rights(c) American Institute of Physics , 2001
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Enginyeria Electrònica i Biomèdica)
dc.subject.classificationMagnetoresistència
dc.subject.classificationDispositius de memòria d'ordinador
dc.subject.classificationMicroelectrònica
dc.subject.classificationEfecte túnel
dc.subject.classificationFerro
dc.subject.otherMagnetoresistance
dc.subject.otherComputer storage devices
dc.subject.otherMicroelectronics
dc.subject.otherTunneling (Physics)
dc.subject.otherIron
dc.titleLarge Magnetoresistance in Fe/MgO/FeCo(001) Epitaxial Tunnel-Junctions on GaAs(001).
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/publishedVersion

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