Document type
ArticleVersion
Published versionPublication date
All rights reserved
Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/22079
Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory
Journal Title
Director/Tutor
Journal ISSN
Volume Title
Related resource
Abstract
A theoretical model for the noise properties of Schottky barrier diodes in the framework of the thermionic-emission¿diffusion theory is presented. The theory incorporates both the noise induced
by the diffusion of carriers through the semiconductor and the noise induced by the thermionic
emission of carriers across the metal¿semiconductor interface. Closed analytical formulas are
derived for the junction resistance, series resistance, and contributions to the net noise localized in
different space regions of the diode, all valid in the whole range of applied biases. An additional
contribution to the voltage-noise spectral density is identified, whose origin may be traced back to
the cross correlation between the voltage-noise sources associated with the junction resistance and
those for the series resistance. It is argued that an inclusion of the cross-correlation term as a new
element in the existing equivalent circuit models of Schottky diodes could explain the discrepancies
between these models and experimental measurements or Monte Carlo simulations.
Subject (English)
Citation
Citation
GOMILA LLUCH, Gabriel, BULASHENKO, Oleg and RUBÍ CAPACETI, José Miguel. Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory. Journal of Applied Physics. 1998. Vol. 83, num. 5, pags. 2619-2630. ISSN 0021-8979. [consulted: 15 of June of 2026]. Available at: https://hdl.handle.net/2445/22079