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1994

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/9945

Determination of the electron density in GaAs/AlxGa1-xAs heterostructures

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http://dx.doi.org/10.1103/PhysRevB.49.13750

Abstract

An optimized self-consistent method for determination of the quantal electron density is presented. It is applied, in the zero-temperature case, to devices with either partial or full donor ionization. A Thomas-Fermi approximation for the T=0 limit is developed and shown to be appropriate for systematic studies of the two-dimensional electron density, σ − . A suitable linear approximation is found that provides simple and accurate analytic expressions for σ − in terms of the physical parameters of the device.

Subject

Electrònica quàntica, Física de l'estat sòlid

Subject (English)

Quantum electronics, Solid state physics

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Articles publicats en revistes (Física Quàntica i Astrofísica)

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MARTORELL DOMENECH, Juan and SPRUNG, Donald W. L. Determination of the electron density in GaAs/AlxGa1-xAs heterostructures. Physical Review B. 1994. Vol. 49, num. 19, pags. 13750-13759. ISSN 0163-1829. [consulted: 7 of June of 2026]. Available at: https://hdl.handle.net/2445/9945

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