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1996

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Please use this identifier to cite or link to this item: https://hdl.handle.net/2445/47412

Study of post-deposition contamination in low-temperature deposited polysilicon films

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The presence of hydrogen in polysilicon films obtained at low temperatures by hot-wire CVD and the post-deposition oxidation by air-exposure of the films are studied in this paper. The experimental results from several characterization techniques (infrared spectroscopy, X-ray photoelectron spectroscopy, secondary ion mass spectrometry and wavelength dispersive spectroscopy) showed that hydrogen and oxygen are homogeneously distributed at grain boundaries throughout the depth of the films. Hydrogen is introduced during the growth process and its concentration is higher in samples deposited at lower temperatures. Oxygen diffuses along the grain boundaries and binds to silicon atoms, mainly in Si 2O groups.

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http://dx.doi.org/10.1016/0921-5107(95)01300-8

Subject

Hidrogen, Deposició química en fase vapor, Temperatures baixes, Electroquímica

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Hydrogen, Chemical vapor deposition, Low temperatures, Electrochemistry

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BERTOMEU I BALAGUERÓ, Joan, et al. Study of post-deposition contamination in low-temperature deposited polysilicon films. Materials Science and Engineering B-Solid State Materials for Advanced Technology. 1996. Vol. 36, num. 1-3, pags. 96-99. ISSN 0921-5107. [consulted: 10 of October of 2026]. Available at: https://hdl.handle.net/2445/47412

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