Study of post-deposition contamination in low-temperature deposited polysilicon films

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dc.contributor.authorBertomeu i Balagueró, Joan
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorPeiró, D.
dc.contributor.authorCifre, J.
dc.contributor.authorDelgado Nieto, Juan Carlos
dc.contributor.authorAndreu i Batallé, Jordi
dc.date.accessioned2013-10-31T11:18:32Z
dc.date.available2013-10-31T11:18:32Z
dc.date.issued1996
dc.date.updated2013-10-31T11:18:32Z
dc.description.abstractThe presence of hydrogen in polysilicon films obtained at low temperatures by hot-wire CVD and the post-deposition oxidation by air-exposure of the films are studied in this paper. The experimental results from several characterization techniques (infrared spectroscopy, X-ray photoelectron spectroscopy, secondary ion mass spectrometry and wavelength dispersive spectroscopy) showed that hydrogen and oxygen are homogeneously distributed at grain boundaries throughout the depth of the films. Hydrogen is introduced during the growth process and its concentration is higher in samples deposited at lower temperatures. Oxygen diffuses along the grain boundaries and binds to silicon atoms, mainly in Si 2O groups.
dc.format.extent14 p.
dc.format.mimetypeapplication/pdf
dc.identifier.idgrec112639
dc.identifier.issn0921-5107
dc.identifier.urihttps://hdl.handle.net/2445/47412
dc.language.isoeng
dc.publisherElsevier B.V.
dc.relation.isformatofVersió postprint del document publicat a: http://dx.doi.org/10.1016/0921-5107(95)01300-8
dc.relation.ispartofMaterials Science and Engineering B-Solid State Materials for Advanced Technology, 1996, vol. 36, num. 1-3, p. 96-99
dc.relation.urihttp://dx.doi.org/10.1016/0921-5107(95)01300-8
dc.rights(c) Elsevier B.V., 1996
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Física Aplicada)
dc.subject.classificationHidrogen
dc.subject.classificationDeposició química en fase vapor
dc.subject.classificationTemperatures baixes
dc.subject.classificationElectroquímica
dc.subject.otherHydrogen
dc.subject.otherChemical vapor deposition
dc.subject.otherLow temperatures
dc.subject.otherElectrochemistry
dc.titleStudy of post-deposition contamination in low-temperature deposited polysilicon films
dc.typeinfo:eu-repo/semantics/article
dc.typeinfo:eu-repo/semantics/acceptedVersion

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