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High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
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We report on properties of high quality 60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be 61.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.
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GACEVIC, Zarko, et al. High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy. Applied Physics Letters. 2011. Vol. 99, num. 031103-1-031103-3. ISSN 0003-6951. [consulted: 25 of June of 2026]. Available at: https://hdl.handle.net/2445/32769