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Si us plau utilitzeu sempre aquest identificador per citar o enllaçar aquest document: https://hdl.handle.net/2445/59729
EFTEM-HRTEM characterization of Er-doped silicon nanocrystal-based oxides/nitrides for MOS light emitting devices
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Er-doped silicon nanocrystal-based oxides/nitrides have been investigated. These layers are grown between a
polycrystalline silicon electrode and a monocrystalline silicon substrate to allow electrical injection. Energy Filtered (EF-)
and High Resolution (HR-) TEM characterization has been performed to provide microscopic insight onto the macroscopic
optoelectronic properties of the samples. Evident Er-clustering has been observed in silicon dioxides but not in silicon
nitrides, suggesting a better Er solubility and local environment when nitrogen is incorporated. Silicon nanocrystals have
been observed in silicon-rich nitride layers, as expected, but also in a region close to the silicon dioxide-polysilicon
interface in a layer with no nitrogen or Si excesses. This unexpected Si clusterization has been attributed to Si diffusion
from the polycrystalline silicon electrode into the silicon dioxide as a consequence of the annealing treatment. The
structural characterization carried out by HRTEM and EFTEM has been correlated with the optoelectronic properties of the
devices.
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Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Any: 2014, Tutores: Francesca Peiró Martínez i Sonia Estradé Albiol
Matèries (anglès)
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RUIZ CARIDAD, Alicia. EFTEM-HRTEM characterization of Er-doped silicon nanocrystal-based oxides/nitrides for MOS light emitting devices. [consulta: 14 de gener de 2026]. [Disponible a: https://hdl.handle.net/2445/59729]