Chaos in resonant-tunneling superlattices

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dc.contributor.authorBulashenko, Olegcat
dc.contributor.authorBonilla, L. L. (Luis López), 1956-cat
dc.date.accessioned2010-01-26T08:52:00Z
dc.date.available2010-01-26T08:52:00Z
dc.date.issued1995cat
dc.description.abstractSpatiotemporal chaos is predicted to occur in n-doped semiconductor superlattices with sequential resonant tunneling as their main charge transport mechanism. Under dc voltage bias, undamped time-dependent oscillations of the current (due to the motion and recycling of electric field domain walls) have been observed in recent experiments. Chaos is the result of forcing this natural oscillation by means of an appropriate external microwave signal.eng
dc.format.extent4 p.cat
dc.format.mimetypeapplication/pdfeng
dc.identifier.idgrec517061cat
dc.identifier.issn0163-1829cat
dc.identifier.urihttps://hdl.handle.net/2445/10914
dc.language.isoengeng
dc.publisherThe American Physical Societyeng
dc.relation.isformatofReproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.52.7849cat
dc.relation.ispartofPhysical Review B, 1995, vol. 52, núm. 11, p. 7849-7852eng
dc.relation.urihttp://dx.doi.org/10.1103/PhysRevB.52.7849
dc.rights(c) The American Physical Society, 1995
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess
dc.sourceArticles publicats en revistes (Física de la Matèria Condensada)
dc.subject.classificationSemiconductorscat
dc.subject.classificationDinàmica de fluidscat
dc.subject.classificationEfecte túnelcat
dc.subject.otherSemiconductorseng
dc.subject.otherFluid dynamicseng
dc.subject.otherTunneling (Physics)eng
dc.titleChaos in resonant-tunneling superlatticeseng
dc.typeinfo:eu-repo/semantics/articleeng
dc.typeinfo:eu-repo/semantics/publishedVersion

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